在铌酸锂(LN)晶体衬底上磁控溅射铟锡氧化物(ITO)薄膜,研究了射频磁控溅射制备ITO/LN薄膜的最佳工艺.采用原子力显微镜(AFM)和X射线衍射(XRD)分析了透明导电ITO膜的制备工艺参数对薄膜表面形貌和晶体结构的影响,同时应用四探针电阻率测量和紫外可见光谱测量技术对所研制的ITO/LN膜的光电性质进行了研究.结果表明,衬底温度为320℃,溅射时间50 min时制备的ITO/LN薄膜具有最佳光电性质,在该条件制备出薄膜的电阻率为3.41×10-4Ω·cm,ITO/LN平均可见光透光率可达74.38％,平均透光率比LN衬底提高了1.1％.应用该溅射条件制备了泰伯效应位相阵列器,其近场衍射成像的相对光强可达0.67.
参考文献
| [1] | E.K. Abdel-Khalek;A.A.Bahgat .Optical anddielectricpropertiesoftransparentglassesandnanocrystalsof lithium niobateandlithiumdiborateinborateglasses[J].Physica, B. Condensed Matter,2010(8):1986-1992. |
| [2] | S. Kilburger;R. Chety;E. Millon;Ph. Di Bin;C. Di Bin;A. Boulle;R. Guinebretiere .Growth of LiNbO_3 thin films on sapphire by pulsed-laser deposition for electro-optic modulators[J].Applied Surface Science: A Journal Devoted to the Properties of Interfaces in Relation to the Synthesis and Behaviour of Materials,2007(19):8263-8267. |
| [3] | M. Nisha;K.A. Vanaja;K.C. Sanal;K.J. Saji;P.M. Aneesh;M.K. Jayaraj .Growth of ITO thin films on polyimide substrate by bias sputtering[J].Materials science in semiconductor processing,2010(1):64-69. |
| [4] | Muneshwar, T.P.;Varma, V.;Meshram, N.;Soni, S.;Dusane, R.O. .Development of low temperature RF magnetron sputtered ITO films on flexible substrate[J].Solar Energy Materials and Solar Cells: An International Journal Devoted to Photovoltaic, Photothermal, and Photochemical Solar Energy Conversion,2010(9):1448-1450. |
| [5] | Matthew W. Noble;David M. Rust;Pietro N. Bernasconi;Jay M. Pasachoff;Bryce A. Babcock;Megan A. Bruck .Observing the solar corona with a tunable Fabry-Perot filter[J].Applied optics,2008(31):5744-5749. |
| [6] | 范天伟,陈云琳,张进宏.基于Talbot效应的掺镁铌酸锂二维六角位相阵列光栅的研究*[J].物理学报,2013(09):249-254. |
| [7] | 江锡顺,万东升,宋学萍,孙兆奇.退火温度对ITO薄膜微结构和光电特性的影响[J].人工晶体学报,2011(06):1536-1540,1556. |
上一张
下一张
上一张
下一张
计量
- 下载量()
- 访问量()
文章评分
- 您的评分：
-
10%
-
20%
-
30%
-
40%
-
50%