ZnO基紫外探测器的研究进展

材料导报, 2006, 20(1): 109-112.

ZnO基紫外探测器的研究进展

赵懿琨 ^1, , 连洁 ^2, , 张飒飒 ^3, , 王公堂 ^4, , 宫文栎 ^5, , 于元勋 ^6, , 卜刚 ^7,

1.山东大学信息科学与工程学院,济南,250100

2.山东大学信息科学与工程学院,济南,250100

3.山东大学信息科学与工程学院,济南,250100

4.山东师范大学物理学院,济南,250014

5.山东省教育学院数理系,济南,250013

6.山东省教育学院数理系,济南,250013

7.山东大学信息科学与工程学院,济南,250100

基金项目: 山东省优秀中青年科学家科研奖励基金(2004BS01007)

关键词： ZnO薄膜 , 紫外探测器 , 宽带隙半导体

Recent Advances in Research on UV Detector Based on ZnO

ZnO是一种新型的宽带隙半导体光电材料,可用于制作高性能的紫外探测器,是未来半导体紫外探测器的发展重点.介绍了ZnO基紫外探测器常见的器件结构、探测材料的基本特性和主要制备方法,以及器件近期的研究进展,并扼要分析了其今后的发展方向.

参考文献

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材料期刊网

ZnO基紫外探测器的研究进展

Recent Advances in Research on UV Detector Based on ZnO

参考文献