利用多响应正交试验方法研究了PECVD法沉积氮化硅薄膜的工艺参数的优化问题.鉴于目前针对多输出影响过程,尚无有效的方法进行工艺参数优化这一问题,利用综合评分法对衬底温度、气体总流量、NH3/SiH4流量比、反应腔气体压力、高频电场功率5个对氮化硅薄膜的主要质量特性影响较大的工艺参数进行全局优化,再对不满足质量期望的工艺参数进行部分正交分析,对全局优化的结果进行调整,得到最终的氮化硅镀膜的最优工艺参数.国内某光伏企业的验证试验表明了所提方法的有效性.
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