对渗气阴极真空电弧法制备的四而体非晶炭(ta-c)膜实施氧等离子体刻蚀,消除其表面石墨层后,发现:原沉积膜中ta-C石墨表层的消除会影响其受激电子的石墨建序化.应用发射电子能耗谱,表面增强拉曼光谱和表面敏化X光吸收光谱等测量方法,测定了其表层的淌除(程度).样品的氧等离子体刻蚀阻迟了受激电子的石墨化作用,可能归因于多相成核过程中石墨晶核的缺失之故.
Electron-stimulated graphitic ordering in tetrahedral amorphous carbon (ta-C) films was found to be affected by the removal of the graphitic surface layer present in as-deposited films. To remove the graphitic layer on ta-C films fabricated by the filtered cathodic vacuum are method, the sample was etched with oxygen plasma. The removal of the surface layer was examined by transmission electron energy loss spectroscopy, surface-enhanced Raman spectroscopy,and surface-sensitive X-ray absorption spectroscopic measurements. The electron-stimulated graphitization was retarded in oxygen plasma etched samples presumably owing to the lack of graphitic nuclei for heterogeneous nucleation.
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