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采用氧气等离子体(OP)处理对氧化铟锡(ITO)薄膜进行表面改性,通过原子力显微镜(AFM)、X射线光电子能谱(XPS)和四探针等测试手段对薄膜样品进行表征,研究了OP处理对ITO表面性质的影响.实验结果表明OP处理有效去除了ITO表面的污染物,优化了ITO表面的化学组分,降低了ITO表面的粗糙度和方块电阻,改善了ITO的表面形态.与此同时,通过XPS监测研究了OP处理后ITO表面化学组分随老化时间的变化,结果显示经过优化的化学组分随老化时间增加而逐渐退化.另外,以OP处理后经过不同老化时间的ITO样品作为空穴注入电极,制备了有机电致发光器件(OELD),通过测试器件的电压-电流-亮度特性,进一步研究了ITO表面性质对于OELD光电性能的影响.

参考文献

[1] Osada T.;Broms P.;Salaneck WR.;Kugler T. .Polymer-based light-emitting devices: investigations on the role of the indium-tin oxide (ITO) electrode[J].Synthetic Metals,1998(1):77-80.
[2] Kim D .[J].Vacuum,2006,81:279-284.
[3] Maurya D K .[J].Microelectronics Journal,2007,38:76-79.
[4] Boehme, M;Charton, C .Properties of ITO on PET film in dependence on the coating conditions and thermal processing[J].Surface & Coatings Technology,2005(1/4):932-935.
[5] Gheidari A M;Behafarid F;Kavei G et al.[J].Materials Science and Engineering B,2007,136:37-40.
[6] Tang C W;Van Slyke S A .[J].Applied Physics Letters,1987,51:913-915.
[7] Burroughes J H;Bradly D D C;Brown A R et al.[J].Nature,1990,347:539-541.
[8] Kido J;Kimura M;Nagai K .MULTILAYER WHITE LIGHT-EMITTING ORGANIC ELECTROLUMINESCENT DEVICE[J].Science,1995(5202):1332-1334.
[9] Cao Y;Parker I D;Yu G .[J].Nature,1999,397:414-417.
[10] Zhang J;Hu J;Zhu ZQ;Gong H;O'Shea SJ .Quartz crystal microbalance coated with sol-gel-derived indium-tin oxide thin films as gas sensor for NO detection[J].Colloids and Surfaces, A. Physicochemical and Engineering Aspects,2004(1/3):23-30.
[11] Wei H;Li W;Li M et al.[J].Applied Surface Science,2006,252:2204-2208.
[12] Van Slyke S A;Chen C H;Tang C W .[J].Applied Physics Letters,1996,69:2160-2162.
[13] Wu CC;Wu CI;Sturm JC;Kahn A .Surface modification of indium tin oxide by plasma treatment: An effective method to improve the efficiency, brightness, and reliability of organic light emitting devices[J].Applied physics letters,1997(11):1348-1350.
[14] Nüesch F;Rothberg L J;Forsythe E W et al.[J].Applied Physics Letters,1999,74:880-882.
[15] Xu X;Yu G;Liu Y et al.[J].Displays,2006,27:24-34.
[16] Choi B;Yoon H;Lee H H .[J].Applied Physics Letters,2000,76:412-414.
[17] Qiu Y;Zhang D Q;Wang L D et al.[J].Synthetic Metals,2002,125:415-418.
[18] Chkoda L;Heske C;Sokolowski M et al.[J].Synthetic Metals,2000,111-112:315-319.
[19] Yu H Y;Feng X D;Grozea D et al.[J].Applied Physics Letters,2001,78:2595-2597.
[20] So S.K.;Cheng C.H.;Leung L.M.;Kwong C.F.;Choi W.K. .Surface preparation and characterization of indium tin oxide substrates for organic electroluminescent devices[J].Applied physics, A. Materials science & processing,1999(4):447-450.
[21] Ishii M.;Fujikawa H.;Tokito S.;Taga Y.;Mori T. .Improvement of organic electroluminescent device performance by in situ plasma treatment of indium-tin-oxide surface[J].Journal of Luminescence: An Interdisciplinary Journal of Research on Excited State Processes in Condensed Matter,2000(0):1165-1167.
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