用反应磁控溅射法在不同偏压下沉积了Zr-Si-N扩散阻挡层,结果表明:Zr-Si-N膜的Si含量、电阻率随偏压的升高而降低;Zr-Si-N膜的晶体相随溅射偏压的升高而增加;Zr-Si-N扩散阻挡层的热稳定性高,在850℃时仍能有效阻挡Cu的扩散.
参考文献
[1] | Broniatowski A .[J].Physical Review Letters,1989,62:3074. |
[2] | [J].Torres J Appl Surf Sci,1995,91:112. |
[3] | Chiou JC.;Chen MC.;Juang KC. .THE PROCESSING WINDOWS FOR SELECTIVE COPPER CHEMICAL VAPOR DEPOSITION FROM CU(HEXAFLUOROACETYLACETONATE)TRIMETHYLVINYLSILANE[J].Journal of the Electrochemical Society,1995(1):177-182. |
[4] | Webb J B;Northcott D;Emesh I .[J].Thin Solid Films,1995,270:483. |
[5] | Kwak M Y;Shin D H;Kang T W et al.[J].Thin Solid Films,1995,339:290. |
[6] | Chem G S;Chen S T .[J].Journal of Vacuum Science and Technology A-Vacuum Surfaces and Films,2000,18:720. |
[7] | Takeyana M B;Noya A;Sakanishi K .[J].Journal of Vacuum Science and Technology B:Microelectronics and Nanometer Structures,2000,18:1333. |
[8] | No J-Tue;O J-Hwam;Lee C .[J].Materials Chemistry and Physics,2000,63:44. |
[9] | Sun X;Reid J S;Kolowa E et al.[J].Journal of Applied Physics,1997,81:656. |
[10] | Fischer D;Schery T;Bauer J G et al.[J].Microelectronic Engineering,2000,50:459. |
[11] | Hirvonen J P;Suui I;Kattelus H et al.[J].Surface and Coatings Technology,1995,74 ~75:981. |
[12] | Diserens M;Patcheider J;Levy F .[J].Surface and Coatings Technology,1998,108~109:241. |
[13] | Olowolafe J O;Rau I;Unruh K M et al.[J].Thin Solid Films,2000,365:19. |
[14] | Lee Y J;Suh B S;Kwon M S et al.[J].Journal of Applied Physics,1999,85:1927. |
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