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用反应磁控溅射法在不同偏压下沉积了Zr-Si-N扩散阻挡层,结果表明:Zr-Si-N膜的Si含量、电阻率随偏压的升高而降低;Zr-Si-N膜的晶体相随溅射偏压的升高而增加;Zr-Si-N扩散阻挡层的热稳定性高,在850℃时仍能有效阻挡Cu的扩散.

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