以GeSi半导体合金为例,采用准稳态模型数值研究了理想垂直Bridgman装置-原型炉中二元合金单晶生长过程的热质对流现象,分析了热瑞利数、生长炉绝热区长度对热质对流、熔体径向溶质分凝的影响规律.结果表明,原型炉中熔体的流动结构随热瑞利数的变化出现三种截然不同的形式;热质对流的驱动力是生长炉热边界条件不连续性引起的径向温度梯度;随着熔体流动强度的增加,径向溶质分凝变化出现两个极小点.
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