采用热蒸发法制备了非晶SiO2纳米线/纳米颗粒复合结构,确定了非晶SiO2纳米线、微米颗粒及SiO2纳米线/纳米颗粒复合结构生长的工艺条件,并利用XRD、SEM、Raman、PL光谱等技术手段分析表征样品.实验结果表明,在不同的沉积温度范围内,生长样品的形貌和结构不同;SiO2纳米线/纳米颗粒复合结构的发光区与Si衬底明显不同,主要集中在黄绿光范围.
SiO2 nanowire/nanoparticle composite structure was prepared by the thermal evaporation mothed.Process Conditions in the preparation of SiO2 nanowire, nanoparticle, and SiO2 nanowire/nanoparticle composite structure were determined.The products were characterized by XRD, SEM, Raman, and PL spectroscopy.The results show that the morphologies and strucutres of the product are controlled by adjusting the growth regions;different from the Si substrate, the luminous area of the SiO2 nanowire/nanoparticle composite structure is mainly concentrated in the yellow-green light range.
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