本文对具有不同的栅源双场板结构的p-GaN栅HEMT器件的性能进行了比较,利用半导体器件仿真工具Synopsys TCAD对器件电学特性进行了分析.仿真结果显示:栅源复合场板结构能改善栅场板边缘的电场峰值,在源极场板边缘产生一个新的峰值,可使器件的击穿电压提高到1365V;间断栅场板与源场板复合结构,能在场板间隙位置产生新的电场峰值,更充分的利用漂移区耐压,使其击穿电压值达到1478V;栅源复合间断场板结构能缓解源场板对栅间断处电场峰值的抑制作用,器件击穿电压提高到最大值1546V.
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