采用HSiCl3-NH3-N2体系在750～900℃在石英陶瓷基板上沉积了Si3N4涂层,研究了温度对涂层沉积速率的影响.结果表明,随着沉积温度的升高,Si3N4涂层的沉积速率和致密度首先相应增大,在850℃达到最大值,此后逐渐下降.沉积所得的Si3N4涂层中有含氢化学键的存在.在沉积Si3N4涂层的过程中,Si3N4颗粒呈团簇状生长,团簇之间存在孔隙.
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