采用水热电泳沉积法在C/C-SiC复合材料表面制备了硅酸钇抗氧化外涂层.研究了沉积电流密度和低温热处理对硅酸钇涂层的影响.采用X-射线衍射仪(XRD)和扫描电子显微镜(SEM)对涂层的相组成和显微结构进行了表征.结果表明:采用声化学法制备的硅酸钇微晶颗粒尺寸为25～40nm.随着沉积电流密度增加,硅酸钇涂层均匀性、致密性先逐渐增加后降低.当电流密度超过0.04 A/cm2时会导致涂层表面开裂.进行低温热处理,涂层表面硅酸钇纳米晶出现熔融现象;随热处理温度增加,涂层表面呈现玻璃化趋势.当热处理温度达1200℃时,表面完全熔融,形成致密的硅酸钇玻璃层.涂层在1500℃静态空气中,经过氧化10 h后,失重仍然小于2%.
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