Modeling of Amperometric Immunosensor for CMOS Integration

稀有金属材料与工程, 2006, 35(z2): 439-442.

Ce Li ^1, , Haigang Yang ^2, , Shanhong Xia ^3, , Chao Bian ^4,

1.The State Key Lab of Transducer Technology, Institute of Electronics, CAS, Beijing 100080, China;Graduate University of Chinese Academy of Sciences, Beijing 100039, China

2.The State Key Lab of Transducer Technology, Institute of Electronics, CAS, Beijing 100080, China

3.The State Key Lab of Transducer Technology, Institute of Electronics, CAS, Beijing 100080, China

4.The State Key Lab of Transducer Technology, Institute of Electronics, CAS, Beijing 100080, China;Graduate University of Chinese Academy of Sciences, Beijing 100039, China

基金项目: The Project is supported by National Natural Science Foundation of China, No. 90307014

Modeling of Amperometric Immunosensor for CMOS Integration

Keywords： amperometric

A circuit model of the Amperometric immunosensor for use in the biosensor system-on-chip simulation is proposed in this paper. The model parameters are extracted with several methods and verified by MATLAB and SPICE simulation. A CMOS potentiostat circuit required for conditioning the Amperometric immunosensor is also included in the circuit model. The mean square error norm of the simulated curve against the measured one is 8.65 × 10-17. The whole circuit has been fabricated in a 0.35am CMOS process.

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Modeling of Amperometric Immunosensor for CMOS Integration

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