采用磁控溅射方法沉积TiO2薄膜及电极层,制备W/TiO2/ITO薄膜阻变存储器单元.利用原子力显微镜、X射线衍射仪、X射线光电子能谱仪对薄膜进行表征,测试结果表明:TiO2薄膜表面平整、致密;组织结构以非晶为主,仅有少量的金红石相TiO2(110)面结晶;钛氧比为1∶1.92,其内部存在少量的氧空位.在电学测试中,元件呈现出了稳定的双极阻变现象,VSet分布在0.92 V左右,VReset分布在-0.82 V左右;元件窗口值稳定,数据保持特性良好.通过对元件Ⅰ-Ⅴ曲线线性拟合结果的分析,我们认为元件的阻变机理由导电细丝机制主导.进一步的分析发现,该导电细丝是由钨原子构成,钨原子在电场作用下发生氧化还原反应并在TiO2薄膜层中迁移,造成了导电细丝的形成和断裂.
参考文献
| [1] | RAINER WASER;MASAKAZU AONO .Nanoionics-based resistive switching memories[J].Nature materials,2007(11):833-840. |
| [2] | Hiroshi Ishiwara .Ferroelectric Random Access Memories[J].Journal of nanoscience and nanotechnology,2012(10):7619-7627. |
| [3] | MATTHIAS WUTTIG;NOBORU YAMADA .Phase-change materials for rewriteable data storage[J].Nature materials,2007(11):824-832. |
| [4] | Sheng-Yu Wang;Chin-Wen Huang;Dai-Ying Lee;Tseung-Yuen Tseng;Ting-Chang Chang .Multilevel resistive switching in Ti/Cu_(x)O/Pt memory devices[J].Journal of Applied Physics,2010(11):114110-1-114110-6. |
| [5] | Wan Shen;Regina Dittmann;Uwe Breuer;Rainer Waser .Improved endurance behavior of resistive switching in (Ba,Sr)TiO_(3) thin films with W top electrode[J].Applied physics letters,2008(22):222102-1-222102-3-0. |
| [6] | F. De Stefano;M. Houssa;J. A. Kittl;M. Jurczak;V. V. Afanas'ev;A. Stesmans .Semiconducting-like filament formation in TiN/HfO_(2)/TiN resistive switching random access memories[J].Applied physics letters,2012(14):142102-1-142102-3. |
| [7] | 高书明,王华,许积文,张小文,袁昌来,杨玲.溶胶浓度对Ag/Mgo.2Zn0.8O/ITO阻变异质结性能的影响研究[J].人工晶体学报,2013(04):653-658,670. |
| [8] | Senthilkumar, V.;Kathalingam, A.;Valanarasu, S.;Kannan, V.;Rhee, J.-K. .Bipolar resistive switching of solution processed TiO_2-graphene oxide nanocomposite for nonvolatile memory applications[J].Physics Letters, A,2013(37):2432-2435. |
| [9] | 闫小兵,史守山,贾长江,张二鹏,李钗,李俊颖,娄建忠,刘保亭.含Ti电极的非晶钛酸锶薄膜的阻变开关特性研究[J].人工晶体学报,2012(05):1276-1279,1285. |
| [10] | Jaewon Jang;Feng Pan;Kyle Braam;Vivek Subramanian .Resistance Switching Characteristics of Solid Electrolyte Chalcogenide Ag_2Se Nanoparticles for Flexible Nonvolatile Memory Applications[J].Advanced Materials,2012(26):3573-3576. |
| [11] | Shuang Gao;Chao Chen;Cheng Song .Dynamic Processes of Resistive Switching in Metallic Filament-Based Organic Memory Devices[J].The journal of physical chemistry, C. Nanomaterials and interfaces,2012(33):17955-17959. |
| [12] | Ielmini, D.;Nardi, F.;Cagli, C. .Physical models of size-dependent nanofilament formation and rupture in NiO resistive switching memories[J].Nanotechnology,2011(25):254022-1-254022-12. |
| [13] | H. Maehne;S. Slesazeck;S. Jakschik;I. Dirnstorfer;T. Mikolajick .The influence of crystallinity on the resistive switching behavior of TiO_2[J].Microelectronic engineering,2011(7):1148-1151. |
| [14] | Kwon, DH;Kim, KM;Jang, JH;Jeon, JM;Lee, MH;Kim, GH;Li, XS;Park, GS;Lee, B;Han, S;Kim, M;Hwang, CS .Atomic structure of conducting nanofilaments in TiO2 resistive switching memory[J].Nature nanotechnology,2010(2):148-153. |
| [15] | Liu Q;Guan WH;Long SB;Jia R;Liu M;Chen JN .Resistive switching memory effect of ZrO2 films with Zr+ implanted[J].Applied physics letters,2008(1):12117-1-12117-3-0. |
| [16] | Seungjae Jung;Jaemin Kong;Sunghoon Song;Kwanghee Lee;Takhee Lee;Hyunsang Hwang;Sanghun Jeon .Resistive Switching Characteristics of Solution-Processed Transparent TiO_x for Nonvolatile Memory Application[J].Journal of the Electrochemical Society,2010(11):H1042-H1045. |
| [17] | Wei Wang;Fujita, S.;Wong, S.S. .RESET Mechanism of TiOx Resistance-Change Memory Device[J].IEEE Electron Device Letters,2009(7):733-735. |
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