介绍了InAs/GaInSb应变层超晶格材料的界面结合类型及其对材料界面结构和光电性能的影响,分析了在超晶格界面处的原子置换和扩散现象.同时,总结了分子束外延生长过程中控制InAs/GaInSb超晶格界面结构的生长工艺,指出采用原子迁移增强(MEE)外延生长技术,可以有效地抑制界面处原子的置换和扩散现象.
参考文献
| [1] | Goldberg A C;Kennerly S W;Little J W et al.[J].Optical Engineering,2003,42:30-46. |
| [2] | Young MH.;Hunter AT.;Miles RH.;Chow DH. .Recent advances in Ga1-xInxSb/InAs superlattice IR detector materials[J].Applied Surface Science: A Journal Devoted to the Properties of Interfaces in Relation to the Synthesis and Behaviour of Materials,1998(0):395-399. |
| [3] | Smith D L;Mailhiot C .[J].Journal of Applied Physics,1987,62:2545-2548. |
| [4] | Talwar DN.;Loehr JP.;Jogai B. .Novel type II strained layer superlattices for long wavelength infrared detectors[J].Materials Science & Engineering, B. Solid-State Materials for Advanced Technology,1998(1/3):12-17. |
| [5] | Szmulowicz F;Heller E R;Frank K F et al.[J].Superlattices and Microstructures,1995,17:373-379. |
| [6] | Grein C H;Young P M;Flatté M E et al.[J].Journal of Applied Physics,1995,78(12):7143-7151. |
| [7] | Fuchs F;Weimer U;Pletschen W;Schmitz J;Ahlswede E;Walther M;Wagner J;Koidl P .High performance InAs/Ga1-xInxSb superlattice infrared photodiodes[J].Applied physics letters,1997(22):3251-3253. |
| [8] | Wei Y;Gin A;Razeghi M et al.[J].Applied Physics Letters,2002,81:3675-3677. |
| [9] | Nosho BZ.;Yang MJ.;Bennett BR.;Whitman LJ.;Barvosa-Carter W. .Interpreting interfacial structure in cross-sectional STM images of III-V semiconductor heterostructures[J].Surface Science: A Journal Devoted to the Physics and Chemistry of Interfaces,2000(3):361-371. |
| [10] | Wagner J;Schmitz J;Herres N et al.[J].Physica E-Low-Dimensional Systems & Nanostructures,1998,2:320-324. |
| [11] | Corbin E;Shaw M J;Kitchin M R et al.[J].Science Technology,2001,16:263-272. |
| [12] | Benett B R;Shanabrook B V;Wagner R J et al.[J].Solid-State Electronics,1994,37:733-737. |
| [13] | Chow D H;Miles R H;Hunter AT .[J].Journal of Vacuum Science and Technology B:Microelectronics and Nanometer Structures,1992,10(02):888-891. |
| [14] | Wang M W;Collins D A;McGill T C et al.[J].Applied Physics Letters,1995,66(18):2981-2983. |
| [15] | Twigg M E;Bennett B R;Shanabrook B V .[J].Applied Physics Letters,1995,67(11):1609-1611. |
| [16] | Schmitz J.;Fuchs F.;Herres N.;Koidl P.;Ralston JD.;Wagner J. .OPTICAL AND STRUCTURAL INVESTIGATIONS OF INTERMIXING REACTIONS AT THE INTERFACES OF INAS/ALSB AND INAS/GASB QUANTUM WELLS GROWN BY MOLECULAR-BEAM EPITAXY[J].Journal of Crystal Growth,1995(1/4 Pt.2):858-862. |
| [17] | Xie Q;Van Nostrand J E;Brown J L et al.[J].Journal of Applied Physics,1999,86:329-337. |
| [18] | Brown T;Brown A;May G .[J].Journal of Vacuum Science and Technology,2002,20(04):1771-1776. |
| [19] | Zborowski J T;Fan W C;Golding T D et al.[J].Journal of Applied Physics,1992,71(12):5908-5912. |
| [20] | Chow D H;Miles R H;Soderstrom J R et al.[J].Journal of Vacuum Science and Technology B:Microelectronics and Nanometer Structures,1990,8(04):710-714. |
| [21] | Kaspi R. .Compositional abruptness at the InAs-on-GaSb interface: optimizing growth by using the Sb desorption signature[J].Journal of Crystal Growth,1999(0):864-867. |
| [22] | Feenstra R M;Collins D A;Mcgill T C .[J].Superlattices and Microstructures,1994,15:215. |
| [23] | Magri R.;Zunger A. .Segregation effects on the optical properties of (InAs)/(GaSb) superlattices[J].Physica, E. Low-dimensional systems & nanostructures,2002(2/4):325-328. |
| [24] | Kaspi R;Steinshnider J;Wermer M et al.[J].Journal of Crystal Growth,2001,225:544-549. |
| [25] | Bennett B R;Shanabrook B V;Wagner R J et al.[J].Applied Physics Letters,1993,63(07):949-951. |
| [26] | Nosho B Z;Bennett B R;Whitman LJ et al.[J].Journal of Vacuum Science and Technology,2001,19:1626-1630. |
上一张
下一张
上一张
下一张
计量
- 下载量()
- 访问量()
文章评分
- 您的评分：
-
10%
-
20%
-
30%
-
40%
-
50%