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Bromine doped hydrogenated amorphous carbon (a-C : Br : H) thin films were deposited on silicon wafers by rf. -plasma enhanced chemical vapor deposition (RF-PECVD) with a frequency of 13. 56 MHz at room temperature using pure bromoethane as a precursor of carbon source mixed with hydrogen (H(2)) as a carrier gas. The structures of the films prepared by partial pressure of mixed gas (C(2)H(5)Br/H(2)) were Studied by Raman spectroscopy. The results indicate that the intensity of the Raman D peak is stronger. the Raman G peak positions shift up it little. and the value of I(D)/I(G), increases from 1. 18 to 1. 36, if the gas pressure of mixed C(2)H(5)Br/H(2) is reduced gradually from 20 to 5 Pa. Meanwhile. the growth of thin film turns gradually into low energy mode promoting the transform of sp(2)-C from chains to rings.