本文通过电场激活压力辅助法(FAPAS)制备了Mg_2Si和掺杂稀土元素Y的Mg_2Si基热电材料,并对不同掺杂量下的试样进行物相分析及热电性能的比较.用该方法制备的两种试样均具有组织均匀,晶粒细小的结构.Y掺杂试样的电性能得到明显改善,在288-580K温度范围内,掺杂2000ppm Y试样的seebeck系数随着温度的升高而增大,其绝对值大于未掺杂试样的seebeck系数.在438K时,其电导率是未掺杂试样电导率的1.67倍.此外,Y掺杂试样的热导率也明显降低了.因此,掺杂试样的热电综合性能得到了提高,其ZT值在408K达到未掺杂试样的2.23倍.
Mg_2Si and Y-doped Mg_2Si were prepared by the field-activated and pressure assisted synthesis (FAPAS) process from elemental powders. The products have uniform and relatively fine-grained microstructure which can ensure good thermal and electrical performances. The Seebeck coefficient of Y-doped Mg_2Si (2000ppmY-doped sample) increases in the temperature range of 288-580K and is higher than that of non-doped Mg_2Si. And the electric conductivity was enhanced as well, which reached up to 1.67 times of non-doped Mg_2Si at 438K. the figure of rnerit-ZT was improved obviously, which reached up to 2.23 times of non-doped Mg_2Si at about 408K.
参考文献
| [1] | Masayasu Akasaka;Tsutomu Iida;Takashi Nemoto;Junichi Soga;Junichi Sato;Kenichiro Makino;Masataka Fukano;Yoshifumi Takanashi .Non-wetting crystal growth of Mg_2Si by vertical Bridgman method and thermoelectric characteristics[J].Journal of Crystal Growth,2007(1):196-201. |
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