采用二步烧结技术制备AZO陶瓷靶材，并采用XRD、SEM和EDS对AZO陶瓷靶材进行表征，研究AZO靶材的电阻性能。结果表明：当Al的掺杂量w(Al2O3)为0.5%时，AZO靶材出现第二相ZnAl2O4；随Al掺杂浓度增加，ZnAl2O4的衍射峰强度逐渐增强，ZnO 晶粒尺寸逐渐减小；随着第二步烧结温度θnd的升高，AZO靶材的晶粒尺寸逐渐增大，相对密度也随之增加。靶材的电阻率随θnd增加而降低，且随掺杂浓度升高而增加；在第一步烧结温度θst=1400℃，升温速率vst=10℃/min，第二步烧结温度θnd=1350℃和tnd=16 h烧结条件下， AZO陶瓷靶材(w(Al2O3)=1.5%)的电阻率仅为2.9×10-2Ω·cm。
AZO(Al-doped ZnO) target materials were prepared by two-step sintering techniques. The AZO ceramic targets were characterized with XRD, SEM and EDS. And the resistance properties of AZO targets were analyzed. The results show that the second phase ZnAl2O4 is detected when Al2O3 doping concentration is 0.5% (mass fraction). ZnAl2O4 diffraction peaks are enhanced and the grain sizes of AZO target are reduced with increasing the doping concentrations. With increasing the second-sintering temperature θnd, the grain sizes of AZO targets and the relative density increase. The electrical resistivity reduces with increasing the second-sintering temperatureθnd, while increases with increasing the doping concentration. The electrical resistivity is 2.9×10-2Ω·cm at the frist-sintering temperature of 1 400℃, the heating rate of 10℃/min, the second-sintering of 1 350℃and holding time of 16h.
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