H和He离子联合注入单晶Si可以促使其表面产生发泡、剥落和层离等表面损伤,由此引发了一种有效地制备SOI材料的新方法,即智能剥离技术.文章简述了H和He离子注入单晶Si在随后的热处理过程中引起表面损伤的机理,探讨了注入条件变化对表面损伤的影响,提出了该领域存在的关键问题并介绍了智能剥离技术在现代半导体技术中潜在的应用前景.
参考文献
| [1] | Bruel M. .Silicon on insulator material technology[J].Electronics Letters,1995(14):1201-1202. |
| [2] | 李龙,章海霞,刘晶,马淑芳,梁建,许并社.GaAs纳米薄膜的分步电沉积制备及表征[J].人工晶体学报,2013(04):601-606,610. |
| [3] | 景钰洲,王雪文,杨怡,赵武,邓周虎.GaN纳米线的溶胶-凝胶法制备及表征[J].硅酸盐通报,2012(05):1243-1246. |
| [4] | Jalaguier E.;Pocas S.;Michaud JF.;Zussy M.;Papon AM.;Bruel M.;Aspar B. .Transfer of 3 in GaAs film on silicon substrate by proton implantation process[J].Electronics Letters,1998(4):408-409. |
| [5] | L. Di Cioccio;E. Jalaguier;F. Letertre .Ⅲ-Ⅴ layer transfer onto silicon and applications[J].Physica Status Solidi, A. Applied Research,2005(4):509-515. |
| [6] | Y. ZHENG;P.D. MORAN;Z.F. GUAN .Transfer of n-type GaSb onto GaAs Substrate by Hydrogen Implantation and Wafer Bonding[J].Journal of Electronic Materials,2000(7):916-920. |
| [7] | Nguyen P;Bourdelle KK;Maurice T;Sousbie N;Boussagol A;Hebras X;Portigliatti L;Letertre F;Tauzin A;Rochat N .The effect of order and dose of H and He sequential implantation on defect formation and evolution in silicon[J].Journal of Applied Physics,2007(3):33506-1-33506-4-0. |
| [8] | Agarwal A.;Venezia VC.;Holland OW.;Eaglesham DJ.;Haynes TE. .Efficient production of silicon-on-insulator films by co-implantation of He+ with H+[J].Applied physics letters,1998(9):1086-1088. |
| [9] | Dungen W;Job R;Ma Y;Huang YL;Mueller T;Fahrner WR;Keller LO;Horstmann JT;Fiedler H .Thermal evolution of hydrogen related defects in hydrogen implanted Czochralski silicon investigated by Raman spectroscopy and atomic force microscopy[J].Journal of Applied Physics,2006(3):34911-1-34911-5-0. |
| [10] | Zheng Y.;Hochbauer T.;Misra A.;Verda R.;He XM.;Nastasi M. Mayer JW.;Lau SS. .Orientation dependence of blistering in H-implanted Si[J].Journal of Applied Physics,2001(5):2972-2978. |
| [11] | Corni F.;Calzolari G.;Frabboni S.;Nobili C.;Ottaviani G.;Tonini R.;Cerofolini G.F.;Leone D.;Servidori M.;Brusa R.S.;Karwasz G.P.;Tiengo N.;Zecca A. .Helium-implanted silicon: a study of bubble precursors[J].Journal of Applied Physics,1999(3):1401-0. |
| [12] | T. Hochbauer;A. Misra;M. Nastasi;J. W. Mayer .Physical mechanisms behind the ion-cut in hydrogen implanted silicon[J].Journal of Applied Physics,2002(5):2335-2342. |
| [13] | Duo XZ.;Zhang MA.;Wang LW.;Lin CL.;Okuyama M.;Noda M. Cheung WY.;Chu PK.;Hu PG.;Wang SX.;Wang LM.;Liu WL. .Comparison between the different implantation orders in H+ and He+ coimplantation[J].Journal of Physics, D. Applied Physics: A Europhysics Journal,2001(4):477-482. |
| [14] | Moutanabbir O;Terreault B .Effects in synergistic blistering of silicon by coimplantation of H, D, and He ions[J].Applied physics letters,2005(5):1906-1-1906-3-0. |
| [15] | Wang Z;Liu CL;Liu TY;Zhang XD;Li WR;Li WX;Yuan B;Wu P;Li MK .Surface exfoliation and defect structures in Si induced by 160 keV He and 110 keV H ion implantation[J].Nuclear Instruments and Methods in Physics Research, Section B. Beam Interactions with Materials and Atoms,2008(2):250-255. |
上一张
下一张
上一张
下一张
计量
- 下载量()
- 访问量()
文章评分
- 您的评分：
-
10%
-
20%
-
30%
-
40%
-
50%