用循环伏安法测试了一系列噻吩类聚合物和单体的氧化还原电位,确定了系列化合物的能级结构,比较了主链上不同取代基团及形成共聚物对聚合物能级和光电性能的影响,为高性能发光器件的制作提供了依据.结果表明,随着噻吩环3位取代烷基碳链的增长,单体带隙减小;形成聚合物有利于降低带隙;通过共聚方式引入聚合物主链的噁二唑吸电子基团可以改进其电子传输性能.
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