采用直流反应磁控溅射方法,在铝基板上制备了AIN薄膜.利用X射线衍射仪、带能量色散谱仪的扫描电子显微镜、阻抗特性测试仪、椭圆偏振光谱仪、大荷载划痕仪等对薄膜特性进行测试,分析了不同溅射工艺条件对生长薄膜的影响.结果表明,获得了化学计量比一致、结合力良好、击穿场强达112V/μm的(100)多晶择优取向AIN薄膜.
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