含Ni-Nb阻挡层的硅基Pb(Zr0.4,Ti0.6)O3电容器的制备及铁电性能研究

人工晶体学报, 2013, 42(2): 282-285.

含Ni-Nb阻挡层的硅基Pb(Zr0.4,Ti0.6)O3电容器的制备及铁电性能研究

赵庆勋 ^1, , 齐晨光 ^2, , 贾冬梅 ^3, , 付跃举 ^4, , 郭建新 ^5, , 刘保亭 ^6,

1.河北大学物理科学与技术学院,保定071002

2.河北大学物理科学与技术学院,保定071002

3.河北大学物理科学与技术学院,保定071002

4.河北大学物理科学与技术学院,保定071002

5.河北大学物理科学与技术学院,保定071002

6.河北大学物理科学与技术学院,保定071002

基金项目: 高等学校博士点基金(20091301110002) 河北省应用基础研究计划重点项目(10963525D) 河北省自然科学基金(E2011201092) 国家自然科学基金(11074063)

关键词： Ni-Nb阻挡层 , Pb(Zr0.4,Ti0.6)O3 , La0.5Sr0.5CoO3

Preparation and Ferroelectric Properties of Si-based Pb(Zr0.4,Ti0.6)O3Capacitor Using Ni-Nb as the Barrier Layer

采用Ni-Nb薄膜作为导电阻挡层,以La0.5 Sr0.5 CoO3 (LSCO)为底电极,构建了LSCO/Pb(Zr0.4,Ti0.6)O3(PZT)/LSCO异质结电容器.使用X射线衍射仪和铁电测试仪对其进行结构表征和性能测试.实验发现:Ni-Nb薄膜为非晶结构,PZT薄膜结晶状况良好.LSCO/PZT/LSCO电容器在5V外加电压测试下,电滞回线具有良好的饱和趋势,剩余极化强度Pr为35.5 μC/cm2,矫顽电压Vc为1.42V,电容器具有良好的抗疲劳特性和保持特性.

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