载气流量对CIS薄膜性能的影响

金属功能材料, 2010, 17(3): 32-36.

载气流量对CIS薄膜性能的影响

侯立婷 ^1, , 刘迎春 ^2, , 方玲 ^3, , 胡小萍 ^4, , 朱景森 ^5, , 李艳萍 ^6, , 卢志超 ^7, , 周少雄 ^8,

1.中国钢研科技集团公司,北京,100081

2.中国钢研科技集团公司,北京,100081

3.中国钢研科技集团公司,北京,100081

4.中国钢研科技集团公司,北京,100081

5.中国钢研科技集团公司,北京,100081

6.中国钢研科技集团公司,北京,100081

7.中国钢研科技集团公司,北京,100081

8.中国钢研科技集团公司,北京,100081

基金项目: 北京市自然科学基金资助项目(2091003)

关键词：硫化 , 氮气载流量 , CuInS2薄膜 , 太阳能电池

Influence of Carrier Gas Flow on Properties of CIS Films

采用Cu-In预制层后硫化法制备CuInS2(CIS)薄膜.研究了硫源处载气流量对薄膜形貌、成分及结构等的影响.用扫描电镜(SEM)、能量色散谱仪(EDS)、X射线衍射仪(XRD)对薄膜形貌、成分、结构进行了表征,并用扩散生长模型加以解释.结果表明,具有CuIn和CuIn2混合相的Cu-In预制膜,在不同的载气流量下,硫化后所制备的薄膜均具有CIS/CuxIny/Cu结构.检测结果支持铜、铟离子穿过先期生成的CIS膜向外扩散,在表面处与硫反应生成CIS的生长模型.

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材料期刊网

载气流量对CIS薄膜性能的影响

Influence of Carrier Gas Flow on Properties of CIS Films

参考文献