采用热丝辅助微波电子回旋共振化学气相沉积法（HWAMWECR-CVD）,通过改变衬底温度及氢稀释比制备了系列硅基薄膜,研究了衬底温度及氢稀释比对薄膜由非晶相转晶相相变及其光电性能的影响。研究结果表明,当采用低温制备硅基薄膜时,衬底温度和氢稀释比的提高都有利于非晶相向晶相的转变,但提高氢稀释比对相变的影响更为显著;晶化比越高并不代表薄膜光电性能越好,95%氢稀释比条件下制备的微晶硅薄膜具有优良的光电性能。
The silicon thin films were prepared with different substrate temperatures and different hydrogen dilution ratios by using HWAMWECR-CVD method.The phase transition process from amorphous to microcrystalline silicon and photo-electronic properties were studied.The experimental results showed that when the silicon thin films were prepared at low temperatures,both of improving the substrate temperature and hydrogen dilution ratio played important roles,but the influence of hydrogen dilution ratio was more obvious than that of substrate temperature;higher microcrystalline volume fraction didn＇t represent higher photo-electronic properties.In the experiment,high-quality μc-Si∶H thin films were prepared at 95% hydrogen dilution ratio.
参考文献
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