The structure of rapldly quenched Al-Si alloys (1 and 4 wt-%Si) was systematically studied by optical and transmission electron microscopy (TEM ) as welI as X-ray djffractjon (XRD). ExperimentaIresults show that rapid solidification refines the grain size. extends the solid solubility of Si in Al and Introduces a high density ot defects which exist in the forms of vacancies, dislocations and dislocation loops. etc.. The decomposition process of the alloys was fol lowed by using differential scanning calorimeter (DSC) and the activation energy for precipitation of Si was obtained through Kissinger analysis. The precipitation behaviour of Supersaturated Si in both samples was further examined by TEM. It was found that Si mainly precipitated inside the grains in Al-1 wt-%Si alloy. while in Al-4 wt-%Si alloy. nearly all the Si precipitates distributed along the grain boundaries. This may be due to the structure difference between the alloys in as-quenched state
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