Cu的双大马士革工艺加上化学机械平坦化（CMP）技术是目前制备Cu布线行之有效的方法。CuCMP制程中，抛光液起着至关重要的作用，针对目前国际主流酸性抛光液存在的问题和Cu及其氧化物与氢氧化物不溶于水的难题，研发了多羟多胺碱性Cu布线抛光液，研究了此抛光液随压力、转速及流量变化的特性，同时也研究了其对布线片的平坦化能力。结果表明，抛光液对Cu的去除速率随压力的增大而显著增大，随转速及流量的增加，Cu的去除速率增大缓慢。显著性依次为压力》转速〉流量。通过对Cu布线抛光实验表明，此抛光液能够实现多种尺寸Cu线条的平坦化。说明研发的碱性抛光液能够实现Cu布线抛光后产物可溶，且不含抑制剂等，能够实现布线片的平坦化。
The dual damascene cooperate with chemical mechanical planarization (CMP) is an effective way to fabricate copper interconnects. Slurry plays an important role in the Cu CMP process. In this paper, we have developed an alkaline slurry for copper pattern wafer CMP. Firstly, we have studied the characteristics of re- moval rate of copper under different pressure, rotation speed (RS) and flow rate (FR) by using the alkaline slurry, the results indicated that the influence of pressure on removal rate was larger than RS and FR, the re- moval rate increased with the pressure, RS and FR followed. The results obtained from copper pattern wafer CMP indicated that the slurrv had a considerable planarization capability.
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