利用化学水浴沉积法在室温下制备了多晶氧化铋薄膜,并在350℃的空气气氛条件下进行退火处理,得到纯的α-Bi2O3,薄膜.对它们的晶相结构、光电性能进行测试.从X衍射分析结果来看,在退火过程中,薄膜结构由四方相和非化学计量相向单斜相转变.光学性质显示退火处理的薄膜吸收边缘明显的向长波的方向移动,发生红移现象,而且禁带宽度减少了0.4eV.退火后的薄膜在室温下暗电导率下降2个数量级.电导率的变化显示具有半导体行为的性质.
参考文献
| [1] | Shuk P.;Guth U.;Gopel W.;Greenblatt M.;Wiemhofer HD. .OXIDE ION CONDUCTING SOLID ELECTROLYTES BASED ON BI2O3 [Review][J].Solid state ionics,1996(3/4):179-196. |
| [2] | V. Fruth;M. Popa;D. Berger .Deposition and characterisation of bismuth oxide thin films[J].Journal of the European Ceramic Society,2005(12):2171-2174. |
| [3] | Shimanoe K.;Miura N.;Yamazoe N.;Suetsugu M. .Bismuth oxide thin film as new electrochromic material[J].Solid state ionics,1998(Special Issue SI):415-419. |
| [4] | 储艳秋,付正文,应丽,郑企克,秦启宗.脉冲激光沉积法制备氧化铋薄膜及其电化学性质研究[J].复旦学报(自然科学版),2003(06):956-960. |
| [5] | T.P. Gujar;V.R. Shinde;C.D. Lokhande .Electrosynthesis of Bi_2O_3 thin films and their use in electrochemical supercapacitors[J].Journal of Power Sources,2006(2):1479-1485. |
| [6] | Killedar V V;Bhosale C H;Lokhande C D .Characterization of spray deposited bismuth oxide thin films from non-aqueous medium[J].Tr J of Physics,1998,22:825-830. |
| [7] | L. Leontie;M. Caraman;M. Delibas;G. I. Rusu .Optical properties of bismuth trioxide thin films[J].Materials Research Bulletin: An International Journal Reporting Research on Crystal Growth and Materials Preparation and Characterization,2001(9):1629-1637. |
| [8] | Lokhande C D;Bhosale C H .Charactefisation of chemically converted sprayed Bi2O3 to Bi2S3 thin films[J].Materials Chemistry and Physics,1997,49:46-49. |
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