以SnCl2·2H2O和SbCl3为原料,利用溶胶-凝胶法制备了SnO2∶Sb薄膜.利用XRD观察了薄膜的结构特点,利用紫外可见分光光度计测量了薄膜的透过率,利用四探针测试系统表征了薄膜的电学性能.讨论了掺杂浓度以及SiO2缓冲层厚度对薄膜光电性能的影响.结果表明,随着掺杂浓度的增大,薄膜的电阻率先降低而后略有升高,当掺杂浓度为5％时,薄膜电阻率达到最小,为8.7×10-3Ω·cm;并深入研究了缓冲层对薄膜性能的改善作用:当掺杂浓度为5％时,随着缓冲层数的增加,薄膜方块电阻呈下降趋势,最小可达到95Ω/口,电阻率达到1.1×10-Ω·cm.
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