介绍了自主研发设计的新型碳化硅合成炉合成原理.研究了炉内温度场,压力场的变化规律,模拟结果和实验结果与传统单热源进行对比.研究表明,热源并联式全透气碳化硅合成炉可以有效增加合成反应区域,炉内压力维持在0.101~0.113 MPa之间,所产生的CO气体能从排气装置顺利排出,炉内气体最大流速不超过0.6 m/s,从而有效防止喷炉事故和有毒气体对人员危害,合成产品的致密性明显提高.
Structure character and the radical theory of the technology on SiC synthesis by means of new designed furnace were introduced.The variation of temperature and pressure field were studied,simulation and experiment results were comparatively analyzed.The results show that the heat source in parallel and breathe freely furnace can Increase the reaction area.Pressure in furnace maintain between 0.101 and 0.113 MPa.The CO gas can be taken out from the exhaust system smoothly.The maximum velocity of gas in no more than 0.6 m/s,so it can effectively prevent the spray accident and toxic gases harm to personnel,the density of synthetic products has improved significantly.
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