欢迎登录材料期刊网

材料期刊网

高级检索

具有类石墨烯二维结构的过渡金属二硫化物(TMIDCs)因其优异的光学、电学、电化学等方面的性质而引起人们的广泛关注.介绍了二维TMDCs的基本性质,及几种常用的制备方法.重点阐述了二维TMDCs的电学性质、光学性质、电化学性质及其潜在应用,并与石墨烯的物理化学性质进行了类比.最后分析了二维TMDCs的发展趋势和面临的挑战.

参考文献

[1] 朱宏伟.石墨烯:单原子层二维碳晶体--2010年诺贝尔物理学奖简介[J].自然杂志,2010(06):326-331.
[2] 张文毓.石墨烯应用研究进展综述[J].新材料产业,2011(07):57-59.
[3] Nair R R;Wu H et al.Unimpeded permeation of water through helium-leak-tight graphene-based membranes[J].SCIENCE,2012,335(6066):442.
[4] Mattheis L F .Band structures of transition-metal-dichalcogenide layer compounds[J].Physical Review B:Condensed Matter,1973,8(10):3719.
[5] Wilson J A;Yoffe A D .The transition metal dichalcogenides:Discussion and interpretation of observed optical,electrical and structural properties[J].Advances in Physics,1969,18(73):193.
[6] Minoru Osada;Takayoshi Sasaki .Two-Dimensional Dielectric Nanosheets: Novel Nanoelectronics From Nanocrystal Building Blocks[J].Advanced Materials,2012(2):210-228.
[7] Ayari A;Cobas E;Ogundadegbe O;Fuhrer MS .Realization and electrical characterization of ultrathin crystals of layered transition-metal dichalcogenides[J].Journal of Applied Physics,2007(1):14507-1-14507-5-0.
[8] Dean, C.R.;Young, A.F.;Meric, I.;Lee, C.;Wang, L.;Sorgenfrei, S.;Watanabe, K.;Taniguchi, T.;Kim, P.;Shepard, K.L.;Hone, J. .Boron nitride substrates for high-quality graphene electronics[J].Nature nanotechnology,2010(10):722-726.
[9] D. Pacile;J. C. Meyer;C. O. Girit;A. Zettl .The two-dimensional phase of boron nitride: Few-atomic-layer sheets and suspended membranes[J].Applied physics letters,2008(13):133107-1-133107-3-0.
[10] Yoffe A D .Layer compounds[J].Annual Review of Materials Science,1993,3:147.
[11] Yoffe A D .Low-dimensional systems:Quantum size effects and electronic properties of semiconductor microcrystallites (zero-dimensional systems) and some quasi-two-dimensional systems[J].Advances in Physics,1993,42(2):173.
[12] A. Kuc;N. Zibouche;T. Heine .Influence of quantum confinement on the electronic structure of the transition metal sulfide TS_2[J].Physical review, B. Condensed matter and materials physics,2011(24):245213:1-245213:4.
[13] Huang X;Zeng Z Y;Zhang H .Metal dichalcogenide nansheets:Preparation,properties and applications[J].Chem Soc Rec,2013,42(5):1934.
[14] Yin, Z.;Li, H.;Jiang, L.;Shi, Y.;Sun, Y.;Lu, G.;Zhang, Q.;Chen, X.;Zhang, H. .Single-layer MoS _2 phototransistors[J].ACS nano,2012(1):74-80.
[15] Alem N et al.Atomically thin hexagonal boron nitride probed by ultrahigh-resolution transmission electron microscopy[J].Physical Review B:Condensed Matter,2009,80:155425.
[16] Splendiani, A;Sun, L;Zhang, YB;Li, TS;Kim, J;Chim, CY;Galli, G;Wang, F .Emerging Photoluminescence in Monolayer MoS2[J].Nano letters,2010(4):1271-1275.
[17] Li, H.;Lu, G.;Wang, Y.;Yin, Z.;Cong, C.;He, Q.;Wang, L.;Ding, F.;Yu, T.;Zhang, H. .Mechanical exfoliation and characterization of single- and few-layer nanosheets of WSe_2, TaS_2, and TaSe_ 2[J].Small,2013(11):1974-1981.
[18] Yin, Z.;He, Q.;Li, H.;Huang, X.;Lu, G.;Fam, D.W.H.;Tok, A.I.Y.;Zhang, Q.;Zhang, H. .Fabrication of single- and multilayer MoS _2 film-based field-effect transistors for sensing NO at room temperature[J].Small,2012(1):63-67.
[19] Jun Feng;Lele Peng;Changzheng Wu;Xu Sun;Shuanglin Hu;Chenwen Lin;Jun Dai;Jinlong Yang;Yi Xie .Giant Moisture Responsiveness of VS2 Ultrathin Nanosheets for Novel Touchless Positioning Interface[J].Advanced Materials,2012(15):1969-1974.
[20] Benameur, M.M.;Radisavljevic, B.;Héron, J.S.;Sahoo, S.;Berger, H.;Kis, A. .Visibility of dichalcogenide nanolayers[J].Nanotechnology,2011(12):125706-1-125706-5.
[21] Lee, C.;Yan, H.;Brus, L.E.;Heinz, T.F.;Hone, J.;Ryu, S. .Anomalous lattice vibrations of single- and few-layer MoS_2[J].ACS nano,2010(5):2695-2700.
[22] H. S. S. Ramakrishna Matte;A. Gomathi;Arun K. Manna .MoS2 and WS2 Analogues of Graphene[J].Angewandte Chemie,2010(24):4059-4062.
[23] Jonathan Coleman N et al.Two-dimensional nanosheets produced by liquid exfoliation of layered materials[J].SCIENCE,2011,331:568.
[24] Yagang Yao;Ziyin Lin;Zhuo Li .Large-scale production of two-dimensional nanosheets[J].Journal of Materials Chemistry: An Interdisciplinary Journal dealing with Synthesis, Structures, Properties and Applications of Materials, Particulary Those Associated with Advanced Technology,2012(27):13494-13499.
[25] Zhan, Y.;Liu, Z.;Najmaei, S.;Ajayan, P.M.;Lou, J. .Large-area vapor-phase growth and characterization of MoS _2 atomic layers on a SiO _2 substrate[J].Small,2012(7):966-971.
[26] Yi-Hsien Lee;Xin-Quan Zhang;Wenjing Zhang;Mu-Tung Chang;Cheng-Te Lin;Kai-Di Chang;Ya-Chu Yu;Jacob Tse-Wei Wang;Chia-Seng Chang;Lain-Jong Li;Tsung-Wu Lin .Synthesis of Large-Area MoS2 Atomic Layers with Chemical Vapor Deposition[J].Advanced Materials,2012(17):2320-2325.
[27] Yu-Chuan Lin;Wenjing Zhang;Jing-Kai Huang .Wafer-scale MoS2 thin layers prepared by MoO3 sulfurization[J].Nanoscale,2012(20):6637-6641.
[28] Liu K;Zhang W;Ye Hsien Lee et al.Growth of large-area and highly crystalline MoS2 thin layer on insulating substrates[J].ACS,2012,12(3):1538.
[29] Matte, H.S.S.R.;Plowman, B.;Datta, R.;Rao, C.N.R. .Graphene analogues of layered metal selenides[J].Dalton transactions: An international journal of inorganic chemistry,2011(40):10322-10325.
[30] Wang, Q.H.;Kalantar-Zadeh, K.;Kis, A.;Coleman, J.N.;Strano, M.S. .Electronics and optoelectronics of two-dimensional transition metal dichalcogenides[J].Nature nanotechnology,2012(11):699-712.
[31] Mak K F et al.Atomically thin MoS2:A new direct-gap semiconductor[J].Physical Review Letters,2010,105:136805.
[32] Xia, FN;Mueller, T;Golizadeh-Mojarad, R;Freitag, M;Lin, YM;Tsang, J;Perebeinos, V;Avouris, P .Photocurrent Imaging and Efficient Photon Detection in a Graphene Transistor[J].Nano letters,2009(3):1039-1044.
[33] Xia F;Mueller T;Lin Y et al.Ultrafast graphene photodetector[J].Nat Nanotechn,2009,4:839.
[34] Radisavljevic, B.;Radenovic, A.;Brivio, J.;Giacometti, V.;Kis, A. .Single-layer MoS2 transistors[J].Nature nanotechnology,2011(3):147-150.
[35] Lee, H.S.;Min, S.-W.;Chang, Y.-G.;Park, M.K.;Nam, T.;Kim, H.;Kim, J.H.;Ryu, S.;Im, S. .MoS _2 nanosheet phototransistors with thickness-modulated optical energy gap[J].Nano letters,2012(7):3695-3700.
[36] Mariyappan Shanmugam;Tanesh Bansal;Chris A. Durcan;Bin Yu .Molybdenum disulphide/titanium dioxide nanocomposite-poly 3-hexylthiophene bulk heterojunction solar cell[J].Applied physics letters,2012(15):153901-1-153901-4.
[37] Lee, C.;Yan, H.;Brus, L.E.;Heinz, T.F.;Hone, J.;Ryu, S. .Anomalous lattice vibrations of single- and few-layer MoS_2[J].ACS nano,2010(5):2695-2700.
[38] Cao T;Wang G;Han F P et al.Valley-selective circular dichroism of monolayer molybdenum disulphide[J].Nature Commun,2012,3:1.
[39] Liu, L.;Kumar, S. B.;Ouyang, Y.;Guo, J. .Performance Limits of Monolayer Transition Metal Dichalcogenide Transistors[J].IEEE Transactions on Electron Devices,2011(9):3042-3047.
[40] Ding, Y.;Wang, Y.;Ni, J.;Shi, L.;Shi, S.;Tang, W. .First principles study of structural, vibrational and electronic properties of graphene-like MX_2 (M=Mo, Nb, W, Ta; X=S, Se, Te) monolayers[J].Physica, B. Condensed Matter,2011(11):2254-2260.
[41] C. Ataca;H. Sahin;S. Ciraci .Stable, Single-Layer MX2 Transition-Metal Oxides and Dichalcogenides in a Honeycomb-Like Structure[J].The journal of physical chemistry, C. Nanomaterials and interfaces,2012(16):8983-8999.
[42] Bissessur R;Kanatzidis M G;Schindler J L et al.Encapsulation of polymers into MoS2 and metal to insulator transition in metastable MoS2[J].Journal of the Chemical Society Chemical Communications,1993,2(20):1582.
[43] Kim S;Konar A;Lee J H et al.High-mobility and lowpower thin-film transistors based on multilayer MoS2 crystal[J].Nat Commun,2012,3:1011.
[44] Radisavljevic, B.;Whitwick, M.B.;Kis, A. .Integrated circuits and logic operations based on single-layer MoS _2[J].ACS nano,2011(12):9934-9938.
[45] Han Wang;Lili Yu;Yi-Hsien Lee;Yumeng Shi;Allen Hsu;Matthew L. Chin;Lain-Jong Li;Madan Dubey;Jing Kong;Tomas Palacios .Integrated Circuits Based on Bilayer MoS-2 Transistors[J].Nano letters,2012(9):4674-4680.
[46] Chang, K.;Chen, W. .L -Cysteine-assisted synthesis of layered MoS_2/graphene composites with excellent electrochemical performances for lithium ion batteries[J].ACS nano,2011(6):4720-4728.
[47] Jie Xiao;Daiwon Choi;Lelia Cosimbescu .Exfoliated MoS2 Nanocomposite as an Anode Material for Lithium Ion Batteries[J].Chemistry of Materials: A Publication of the American Chemistry Society,2010(16):4522-4524.
[48] Xiao Huang;Xiaoying Qi;Freddy Boey .Graphene-based composites[J].Chemical Society Reviews,2012(2):666-686.
[49] Min S;Lu G .Sites for high efficient photocatalytic hydrogen evolution on a limited-layered MoS2 cocatalyst confined on grapheme sheets-the role of grapheme[J].ACS,2012,116(48):25415.
[50] Soon J M;Loh K P .The electrochemical society (ECS)publications are no longer hosted on scitation[J].Electrochemical and Solid-State Letters,2007,10(11):A250.
[51] Perkins, F.K.;Friedman, A.L.;Cobas, E.;Campbell, P.M.;Jernigan, G.G.;Jonker, B.T. .Chemical vapor sensing with monolayer MoS_2[J].Nano letters,2013(2):668-673.
[52] He, Q.;Zeng, Z.;Yin, Z.;Li, H.;Wu, S.;Huang, X.;Zhang, H. .Fabrication of flexible MoS_2 thin-film transistor arrays for practical gas-sensing applications[J].Small,2012(19):2994-2999.
[53] Sivacarendran Balendhran;Jian Zhen Ou;Madhu Bhaskaran .Atomically thin layers of MoS2 via a two step thermal evaporation-exfoliation method[J].Nanoscale,2012(2):461-466.
[54] Julien C;Sekine T et al.Lattice dynamics of lithium intercalated MoS2[J].Solid State Ionicis,1991,48(3-4):225.
[55] Late, D.J.;Liu, B.;Matte, H.S.S.R.;Dravid, V.P.;Rao, C.N.R. .Hysteresis in single-layer MoS _2 field effect transistors[J].ACS nano,2012(6):5635-5641.
[56] Wu, S.;Zeng, Z.;He, Q.;Wang, Z.;Wang, S.J.;Du, Y.;Yin, Z.;Sun, X.;Chen, W.;Zhang, H. .Electrochemically reduced single-layer MoS _2 nanosheets: Characterization, properties, and sensing applications[J].Small,2012(14):2264-2270.
[57] Bertolazzi, S.;Brivio, J.;Kis, A. .Stretching and breaking of ultrathin MoS_2[J].ACS nano,2011(12):9703-9709.
上一张 下一张
上一张 下一张
计量
  • 下载量()
  • 访问量()
文章评分
  • 您的评分:
  • 1
    0%
  • 2
    0%
  • 3
    0%
  • 4
    0%
  • 5
    0%