提高MgB2超导体临界电流密度的研究进展

材料导报, 2006, 20(11): 10-12.

提高MgB2超导体临界电流密度的研究进展

任树洋 ^1, , 任忠鸣 ^2, , 任维丽 ^3, , 张金仓 ^4, , 池长昀 ^5,

1.上海大学材料科学与工程学院,上海,200072

2.上海大学材料科学与工程学院,上海,200072

3.上海大学材料科学与工程学院,上海,200072

4.上海大学理学院,上海,200436

5.上海大学理学院,上海,200436

基金项目: 上海市科委科技计划(04ZDl4002) 科技部"攀登计划" 国家自然科学基金(50234020;50225416;59871026)

关键词： MgB2 , 制备工艺 , 元素掺杂 , 强磁场

Progress in Enhancing the Critical Current Density of MgB2 Superconductor

临界电流是超导体载流能力大小的重要表征,论述了制备工艺、元素掺杂和物理场对MgB2超导体临界电流密度的影响.使用非晶态高纯硼粉制备致密的MgB2试样有利于样品临界电流密度的提高,添加SiC或者Ti也能起到提高临界电流密度的作用,质子照射使MgB2试样在高磁场条件下的临界电流密度增加,强磁场下烧结则有利于提高MgB2样品临界的传输电流密度.

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材料期刊网

提高MgB2超导体临界电流密度的研究进展

Progress in Enhancing the Critical Current Density of MgB2 Superconductor

参考文献