目的：探索适合于TSV技术的最佳CMP工艺。方法在碱性条件下,利用碱性FA/O型鳌合剂极强的鳌合能力,对铜膜进行化学机械抛光,通过调节抛光工艺参数及抛光液配比,获得超高的抛光速率和较低的表面粗糙度。结果在压力27.56 kPa,流量175 mL/min,上下盘转速105/105 r/min,pH=11.0,温度40℃,氧化剂、磨料、螯合剂体积分数分别为1%,50%,10%的条件下,经过CMP平坦化,铜膜的去除速率达2067.245 nm/min,且表面粗糙度得到明显改善。结论该工艺能获得高抛光速率。
Objective The optimal CMP technique used for TSV Technology was explored in this paper. Methods In alkaline condition, chemical mechanical polishing was carried out on the copper film and the high polishing rate and low surface roughness were acquired through adjustment of polishing technical parameters and polishing liquid formulation, taking advantage of the ex-tremely strong chelating ability of FA/O chelating agent. Results The Cu film removal rate reached 2067. 245 nm/min and the roughness was obviously improved after CMP when the pressure was 27. 56 kPa, the flow rate was 175 mL/min, the rotating speed was 105/105 r/min, the pH value was 11. 0, the temperature was 40℃, and the slurry contained 1% oxidant, 50% abrasive and 10% chelating agent. Conclusion The process could achieve high polishing rate.
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