在多孔Si上使用不同催化剂成功生长ZnO纳米结构.结果表明,Au作催化剂在Si衬底上得到末端呈六角形的ZnO纳米棒,Cu作催化剂在Si(100)和(111)分别上生长出带状和棒状纳米ZnO,Zn作催化剂在Si衬底上则获得ZnO纳米线.Zn催化制备的ZnO纳米线晶面间距为0.283nm,生长方向是[0110],具有结晶较好的六角纤锌矿晶体结构.比较了不同催化剂制备ZnO的光学性能,发现得到Zn催化制备的ZnO纳米线缺陷绿光峰最弱,因此Zn催化生长制备的纳米ZnO结构质量较好.空气中退火后,3种催化剂生长的纳米ZnO的缺陷发光峰位置不变,而强度变弱.
The growth of zinc oxide(ZnO)nanostructures on Au-, Cu- and Zn-filled (111) and (100) porous silicons (PSs) has been investigated. The results indicate that the ZnO nanostructures grown on Au-filled (111) PS are possessed of rod-shapes with hexagonal end faces, those on the Cu-filled (100) or (111) PS are possessed of belt-shapes or rod-shapes, and those on the Zn-filled(100) or (111) PS are possessed of wire-shapes. The ZnO growth on the Au- and Cu-filled PS are mainly along c-axis orientation,while its growth on the Zn-filled PS are mainly along [0110] orientation, and it possesses a single crystal hexagonal structure without dislocations and stacking faults. In addition, the green emission intensity of the ZnO grown on Zn-filled PS caused by oxygen vacancies of the ZnO is weaker than that of the ZnO grown on Au (Cu)-filled PS,. It could be concluded that the ZnO grown on Zn-filled PS produces a better quality. After annealing in air, the positions of the green emission peaks do not vary, while the intensities are weakened.
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