射频磁控溅射法制备TiO2-xNx薄膜的结构性能研究

人工晶体学报, 2008, 37(5): 1127-1131.

射频磁控溅射法制备TiO2-xNx薄膜的结构性能研究

冯磊 ^1, , 罗士雨 ^2, , 黄涛华 ^3, , 林辉 ^4, , 滕浩 ^5, , 汪洪 ^6, , 周圣明 ^7,

1.中国科学院上海光学精密机械研究所,上海,201800;安徽大学物理与材料科学学院,合肥,230039

2.中国科学院上海光学精密机械研究所,上海,201800;安徽大学物理与材料科学学院,合肥,230039

3.中国科学院上海光学精密机械研究所,上海,201800

4.中国科学院上海光学精密机械研究所,上海,201800

5.中国科学院上海光学精密机械研究所,上海,201800

6.安徽大学物理与材料科学学院,合肥,230039

7.中国科学院上海光学精密机械研究所,上海,201800

关键词： TiO2 , 射频磁控溅射 , 氮掺杂 , X射线光电子能谱

Study on the Structure and Properties of TiO2-xNx Thin Films Fabricated by RF Magnetron Sputtering

利用射频磁控溅射法室温下在Si(100)衬底上制备了N掺杂的TiO2薄膜,并且采用x射线衍射(XRD)、X射线光电子能谱(XPS)和透射光谱对薄膜进行了表征.XRD结果表明在纯Ar和N2(33.3%)/Ar气氛下制备的TiO2-xNx薄膜均为单一的金红石相,薄膜结晶性良好,呈高度(211)择优取向,而在N2(50.0%)/Ar下制备的薄膜结晶性明显变差;对于N掺杂的TiO2薄膜,XPS表明部分N原子进入TiO2晶格,并且以N-Ti-O、N-O键以及间隙式N原子形式存在;透射光谱表明掺N后的TiO2薄膜吸收边发生了红移.

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