采用X射线衍射(XRD),扫描电镜(SEM)及能谱(EDAX)等手段,研究了含铼单晶高温合金DD32的高温氧化行为.结果表明,氧化初期增重迅速,由NiO的形成和生长控制,符合抛物线规律;随着氧化时间的延长,氧化增重变得十分缓慢,由α-Al2O3的形成和生长控制.在900,1000℃时的氧化膜由3层组成,最外层为(Ni,Co)O层,中间层由复杂化合物以及尖晶石化合物等组成,内层为靠近基体合金的连续的Al2O3层.氧化过程中,分布在中间层的富Re和W相起到"扩散障"的作用,降低基体合金中Al向外的扩散速率,在内层形成均匀连续的Al2O3氧化膜层,进而抑制氧化膜生长,导致氧化速率降低.
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