欢迎登录材料期刊网

材料期刊网

高级检索

对纳米多孔低介电常数薄膜孔洞率、孔径、孔径分布和孔洞连通性等孔结构的表征有助于理解薄膜的结构和提高其性能.近年来开展了利用与特殊X射线反射联用的小角中子散射、小角X射线散射、椭偏测孔仪、正电子湮没谱和表面声波谱等非破坏性方法表征多孔低介电常数薄膜孔结构的研究.介绍了这些方法的基本原理,综述了利用这些方法研究低介电常数介质薄膜及其集成工艺的进展,总结了这些方法表征多孔薄膜孔结构的特征.

参考文献

[1] Lee W W;Ho P S .[J].MRS Bulletin,1997,22(10):19-23.
[2] Hasegawa S.;Inokuma T.;Kurata Y.;Tsukaoka T. .Dielectric properties of fluorinated silicon dioxide films[J].Journal of Non-Crystalline Solids: A Journal Devoted to Oxide, Halide, Chalcogenide and Metallic Glasses, Amorphous Semiconductors, Non-Crystalline Films, Glass-Ceramics and Glassy Composites,1998(1/3):154-165.
[3] Valentini L.;Kenny JM.;Lozzi L.;Santucci S.;Braca E. .Relationship between the optical and mechanical properties of fluorinated amorphous carbon thin films[J].Journal of Non-Crystalline Solids: A Journal Devoted to Oxide, Halide, Chalcogenide and Metallic Glasses, Amorphous Semiconductors, Non-Crystalline Films, Glass-Ceramics and Glassy Composites,2001(3):153-159.
[4] Brusa R S;Spagolla G;Karwasz G P et al.[J].Journal of Applied Physics,2004,95(05):2348-2354.
[5] Maex K;Baklanov M R;Shamiryan D et al.[J].Journal of Applied Physics,2003,93(11):8793-8841.
[6] Yu R S;Ohdaira T;Suzuki R et al.[J].Applied Physics Letters,2003,83(24):4966-4968.
[7] Petkov M P;Weber M P;Lynn K G et al.[J].Applied Physics Letters,2001,79(23):3884-3886.
[8] Godbey DJ.;Purdy AP.;Snow AW.;Buckley LJ. .COPPER DIFFUSION IN ORGANIC POLYMER RESISTS AND INTER-LEVEL DIELECTRICS[J].Thin Solid Films: An International Journal on the Science and Technology of Thin and Thick Films,1997(0):470-474.
[9] Sun JN.;Dull TL.;Frieze WE.;Yee AF.;Ryan ET.;Lin S. Wetzel J.;Gidley DW. .Probing diffusion barrier integrity on porous silica low-k thin films using positron annihilation lifetime spectroscopy[J].Journal of Applied Physics,2001(9):5138-5144.
[10] Grill A;Patel V;Rodbell K P et al.[J].Journal of Applied Physics,2003,94(05):3427-3435.
[11] Sun J N;Gidley D W;Hu Y F et al.[J].Materials Research Society Symposium Proceedings,2002,726:Q10.5.1-Q10.5.12.
[12] Gidley D W;Frieze W E;Dull T L et al.[J].Applied Physics Letters,2000,76(10):1282-1284.
[13] Baklanov M R;Mogilnikov K P .[J].Microelectronic Engineering,2002,64:335-349.
[14] Petkov M P;Wang C L;Weber M H et al.[J].Journal of Physical Chemistry B,2003,107:2725-2734.
[15] 丁大钊;叶春堂;赵志祥.中子物理学--原理、方法与应用[M].北京:原子能出版社,2001:784-791.
[16] Wu W L;Wallace W E;Lin E K et al.[J].Journal of Applied Physics,2000,87(03):1193-1200.
[17] Huang E;Toney M F;Volksen W et al.[J].Applied Physics Letters,2002,81(12):2232-2234.
[18] 廖延彪.偏振光学[M].北京:科学出版社,2003:322-325.
[19] Baklanov M R;Mogilnikov K P;Polovinkin V G et al.[J].Journal of Vacuum Science and Technology,2000,B18(03):1385-1397.
[20] Baklanov M R;Mogilnikov K P .[J].Res Soc Symp Proc,2000,612:D4.2.1-D4.2.6.
[21] Sun J N;Hu Y F;Frieze W E et al.[J].Radiation Physics and Chemistry,2003,68:345-349.
[22] Shamiryan D.;Baklanov MR.;Maex K. .Diffusion barrier integrity evaluation by ellipsometric porosimetry[J].Journal of Vacuum Science & Technology, B. Microelectronics and Nanometer Structures: Processing, Measurement and Phenomena,2003(1):220-226.
[23] 郁伟中.正电子物理及其应用[M].北京:科学出版社,2003:58-63.
[24] Dull T L;Frieze W E;Gidley D W et al.[J].Journal of Physical Chemistry B,2001,105:4657-4662.
[25] Wang CL.;Weber MH.;Lynn KG.;Rodbell KP. .Nanometer-scale pores in low-k dielectric films probed by positron annihilation lifetime spectroscopy[J].Applied physics letters,2002(23):4413-4415.
[26] Gidley D W;Frieze W E;Dull T L et al.[J].Physical Review B,1999,60(08):5157-5160.
[27] Petkov M P;Weber M H;Lynn K G et al.[J].Journal of Applied Physics,1999,86(06):3104-3109.
[28] Uedono A;Chen Z Q;Suzuki R et al.[J].Journal of Applied Physics,2001,90(05):2498-2503.
[29] Xu J.;Moxom J.;Yang S.;Suzuki R.;Ohdaira T. .Porosity in porous methyl-silsesquioxane (MSQ) films[J].Applied Surface Science: A Journal Devoted to the Properties of Interfaces in Relation to the Synthesis and Behaviour of Materials,2002(1/4):189-194.
[30] Misheva M.;Margaca FMA.;Salvado IMM.;Djourelov N. .Positronium study of porous structure of sol-gel prepared SiO2: influence of pH[J].Journal of Non-Crystalline Solids: A Journal Devoted to Oxide, Halide, Chalcogenide and Metallic Glasses, Amorphous Semiconductors, Non-Crystalline Films, Glass-Ceramics and Glassy Composites,2001(2/3):196-203.
[31] Yu R S;Ito K;Hirata K et al.[J].Journal of Applied Physics,2003,93(06):3340-3344.
[32] Petkov M P;Weber M H;Lynn K G et al.[J].Applied Physics Letters,2000,77(16):2470-2472.
上一张 下一张
上一张 下一张
计量
  • 下载量()
  • 访问量()
文章评分
  • 您的评分:
  • 1
    0%
  • 2
    0%
  • 3
    0%
  • 4
    0%
  • 5
    0%