低电阻率Ba0.92Ca0.08Ti1.02O3PTCR陶瓷界面缺陷态研究

无机材料学报, 2003, 18(6): 1235-1239.

低电阻率Ba_0.92Ca_0.08Ti_1.02O₃PTCR陶瓷界面缺陷态研究

曹明贺 , 袁俊 , 周东祥 , 龚树萍

2. 2. 华中科技大学电子科学与工程系, 武汉 430074

1.1.Department of Materials Science and Engineering

Beijing 100084

2. 2.Department of electrical Science and Technology

Huazhong University of Science and Technology

China

关键词：低室温电阻率 , PTCR ceramics , grain boundary , defect structure

Defect State in Grain Boundary of Ba_0.92Ca_0.08Ti_1.02O₃ Ceramics with Low Room Temperature Resistivity

CAO Ming-He , YUAN Jun , ZHOU Dong-Xiang , GONG Shu-Ping

Keywords： low room temperature resistivity , PTCR陶瓷 , 晶界 , 缺陷结构

用TEM和EDS相结合的测试手段,研究了低电阻率Ba_0.92Ca_0.08Ti_1.02O₃PTCR陶瓷材料的界面元素分布.根据界面元素分布的情况,对低电阻率Ba_0.92Ca_0.08Ti_1.02O₃PTCR陶瓷界面可能存在的缺陷态进行分析,认为在低电阻率Ba_0.92Ca_0.08Ti_1.02O₃PTCR陶瓷界面上主要存在以下缺陷结构:Mn"_Ti,Mn’_Ti或Al’_Ti,V"_Ba.

The distribution of elements on the grain boundaries of Ba_0.92Ca_0.08Ti_1.02O₃ ceramics with low room temperature resistivity was studied by TEM combined with EDS. The point defects in the grain boundaries were also analyzed. The results show that the point defects in the grain boudaries of Ba_0.92Ca_0.08Ti_1.02O₃ ceramics with low room temperature resistivity mainly include Mn"_Ti, Mn'_Ti or Al'_Ti, and V"_Ba.

参考文献

[1]

西哲也. チタソバヴリム系瓷器半导体の制造方法, 特开平4-264702(1992-9-21).
[2] Heywang W. J. Am. Ceram. Soc., 1994, 47 (10): 484--490.
[3] Daniels J, Wernicke R. “Defect chemistry and electrical conductivity of doped barium titanate ceramics: Part Ⅴ. New aspect of an improved PTC model”. Philips Res. Rep., 1976, 31 (6): 544--59.
[4] Yamada A, Chiang Y M. J. Am. Ceram. Soc., 1995, 78 (4): 909--914.
[5] Cao M H, Zhou D X, Gong S P. Materials Science and Engineering, 2002, B 88: 35--39.
[6] Cao M H, Zhou D X, Gong S P. Materials Science Edition, 2001, 16 (3): 26--32.
[7] Lewis G V, Catlow C R A. J. Phys. Chem. Solids., 1986, 47 (1): 89--97.

上一张下一张

计量

下载量()
访问量()

作者相关

文章评分

您的评分：
1

0%
2

0%
3

0%
4

0%
5

0%

材料期刊网