利用金属有机物化学气相淀积（MOCVD）技术在蓝宝石衬底上生长了InGaN∶Mg薄膜,通过改变外延生长温度优化p型InGaN∶Mg表面形貌和电学特性。在800℃,InGaN的空穴浓度为1.9×1019cm-3,电阻率较低,通过原子力显微镜观察到粗化的样品表面有很多圆丘,其均方根粗糙度是所有样品中最高的,综合粗化的表面和优化电学特性的p-InGaN接触层的LED光功率提高23%。
InGaN∶Mg films have been grown by metal-organic chemical vapor deposition,the surface morphology and electrical properties of the p-InGaN are optimised by changing the epitaxial growth temperature.The sample grown at 800℃ had a lower resistivity than the other samples,hole concentration of the p-InGaN is 1.9×1019cm-3,many knolls for roughen sample surface were observed by atomic force microscopy,its root-mean-square is highest in all samples.The optical power of the LED with roughened surface and optimal electrical properties of p-InGaN contact layer was improved 23%.
参考文献
| [1] | Huang HW;Kao CC;Chu JT;Wang WC;Lu TC;Kuo HC;Wang SC;Yu CC;Kuo SY .Investigation of InGaN/GaN light emitting diodes with nano-roughened surface by excimer laser etching method[J].Materials Science & Engineering, B. Solid-State Materials for Advanced Technology,2007(2/3):182-186. |
| [2] | Kumakura K.;Kobayashi N.;Makimoto T. .High hole concentrations in Mg-doped InGaN grown by MOVPE[J].Journal of Crystal Growth,2000(0):267-270. |
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