采用电沉积方法在Cu基底上制备一层In薄膜得到Cu-In扩散偶.将扩散偶在T=453K、503K和553K时分别进行t=20min、40min、60min和90 min的热处理.实验结果表明,在Cu-In扩散偶界面形成了不同厚度的金属间化合物层Cu11In9相;将Cu11In9相的厚度与热处理时间的关系接经验公式进行拟合,得到比例常数k和生长速率时间指数n;k和n值的大小表明,金属间化合物Cu11In9相层的生长速率受扩散和固态铜在液态铟中的溶解共同控制.
In order to study the growth kinetics of the Cu11In9 phase, Cu-In diffusion couples are prepared by electrodepositing in film on Cu substrate. The diffusion couples are annealed at temperatures of 453K, 503K and 553K, respectively for t = 20min, 40min, 60min and 90 min. The experimental results reveal that there is an intermetallic compound of Cu11In9 with different thickness formed in the Cu-In interface. The average thickness d of the Cu11 In9 layer is mathematically described as a power function of the annealing time t. The values of proportionality coefficient k and the exponent n are obtained by linear fit. According to the values of k and exponent n,the growth of Cu11In9 layer is not just controlled by the volume diffusion, the dissolution of Cu is also contributed to the rate-controlling process.
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