采用热丝化学气相沉积(HWCVD)技术在低温条件下(100℃)制备超薄(～30 nm)的硼掺杂硅薄膜.系统研究了氢稀释比例RH对薄膜的微结构和电学性能的影响.当RH由55增加至115,薄膜的有序度增加,晶化率升高,载流子浓度增加,暗电导率增加;同时,薄膜的缺陷密度增加、霍尔迁移率降低.实验证实,当RH=55～70时,超薄硅薄膜开始晶化,这是薄膜由非晶到纳米晶的转化区.快速热退火工艺进一步提高了薄膜导电率.在RH=115、衬底温度为100℃沉积条件下,经过420℃、80 s退火,获得电导率为6.88 S/cm的超薄硼掺杂纳米晶硅薄膜.
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