采用溶液法制备了硫氰酸亚铜(CuSCN)薄膜,并将其作为空穴传输层制备了平面n-i-p型钙钛矿太阳电池.系统考察了CuSCN薄膜退火温度、旋涂转速对钙钛矿太阳电池性能的影响.研究结果表明,CuSCN薄膜在70 ℃下退火10 min可以获得较好的电池性能;在此基础上通过调整旋涂转速至2000 r/min,控制CuSCN薄膜厚度约为240 nm,电池性能获得了进一步的提升,电池效率可达11.77%.该研究结果表明,CuSCN材料是一种有潜力的、低成本高性能无机空穴传输材料.
Planar n-i-p type perovskite solar cells were fabricated by using solution processed CuSCN as the hole transporting layer.The influences of CuSCN fabrication conditions such as annealing temperature, spin coating speed on solar cell performances were carefully investigated.The results show that, solar cells exhibits better performance by using CuSCN films annealed at 70 ℃ for 10 min.Furthermore, by controlling the spin coating speed at 2000 r/min, and fixing the CuSCN film thickness around 240 nm, solar cell performance has been improved substantially to 11.77%.Current work indicates that CuSCN has potential to be a cheap and high performance inorganic hole transporting material.
参考文献
- 下载量()
- 访问量()
- 您的评分：
-
10%
-
20%
-
30%
-
40%
-
50%