使用射频磁控溅射法在n型Si(001)基片上生长了Gd2O3薄膜.X射线衍射扫描研究和高分辨透射电子显微镜观察表明,薄膜由立方相和单斜相混合构成,且表现出立方(111)晶面和单斜(401)晶面的择优取向生长.XPS分析表明薄膜的元素组成接近化学计量比.电性能测试发现,薄膜拥有合适的介电常数,较小的漏电流密度和较大的击穿场强,厚度为15 nm的薄膜介电常数为23,漏电流密度为3.6×10-15A·cm-2(偏压为+1 V时),击穿场强为3.5 MV·cm-1.
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