本文通过对电磁加热八英寸晶片的立式氮化物MOCVD反应室建立数学模型,利用有限元法,对传统的加热结构进行了优化.为提高晶片温度分布的均匀性,本文提出了矩形槽和圆环段形槽两种不同槽结构的基座,通过对这两种槽结构基座的优化分析发现,与传统用的基座相比,这两种槽结构的基座改变了传统基座中的传热方式和不同方向的传热速率,从而提高了晶片温度分布的均匀性,这有利于提高薄膜生长的质量.
参考文献
[1] | 退火对电子辐照氮化镓光电性能的影响[J].人工晶体学报,2012(06):1524-1527. |
[2] | 李亮,李忠辉,罗伟科,董逊,彭大青,张东国.高质量GaN薄膜的MOCVD同质外延生长[J].人工晶体学报,2013(05):915-917. |
[3] | 徐谦,左然,张红.反向流动垂直喷淋式MOCVD反应器设计与数值模拟[J].人工晶体学报,2005(06):1059-1064. |
[4] | 左然,张红,刘祥林.径向三重流MOCVD反应器输运过程的数值模拟[J].半导体学报,2005(05):977-982. |
[5] | 钟树泉,任晓敏,王琦,黄辉,黄永清,张霞,蔡世伟.MOCVD反应器热流场的数值模拟研究[J].人工晶体学报,2008(06):1342-1348. |
[6] | Zuo R;Zhang H;Liu XL .Transport phenomena in radial flow MOCVD reactor with three concentric vertical inlets[J].Journal of Crystal Growth,2006(2):498-508. |
[7] | Ran Zuo;Qian Xu;Hong Zhang .An inverse-flow showerhead MOVPE reactor design[J].Journal of Crystal Growth,2007(0):425-427. |
[8] | Parikh RP;Adomaitis RA .An overview of gallium nitride growth chemistry and its effect on reactor design: Application to a planetary radial-flow CVD system[J].Journal of Crystal Growth,2006(2):259-278. |
[9] | Theodoropoulos C.;Moffat HK.;Han J.;Mountziaris TJ. .Design of gas inlets for the growth of gallium nitride by metalorganic vapor phase epitaxy[J].Journal of Crystal Growth,2000(1/2):65-81. |
[10] | 徐谦,左然.反向流动垂直喷淋式MOCVD反应器生长GaN的化学反应数值模拟[J].人工晶体学报,2007(02):338-343. |
[11] | Q.-S. Chen;P. Gao;W.R. Hu .Effects of induction heating on temperature distribution and growth rate in large-size SiC growth system[J].Journal of Crystal Growth,2004(1/3):320-326. |
[12] | 蒲红斌,陈治明,李留臣,封先锋,张群社,沃立民,黄媛媛.用热壁CVD法在SiC衬底上生长SiCGe合金的热场分析与设计[J].人工晶体学报,2004(05):712-716. |
[13] | 许力,鲁二峰,周峰.基于建模与优化的MOCVD温度均匀控制[J].人工晶体学报,2013(06):1175-1180. |
[14] | Thermal transportation simulation of a susceptor structure with ring groove for the vertical MOCVD reactor[J].Journal of Crystal Growth,2009(23/24):4679. |
[15] | Zhiming Li;Jinping Li;Haiying Jiang;Yanbin Han;Jianqin Yin;Yingjie Xia;Yongming Chang;Jincheng Zhang;Yue Hao .Effect of thermocouple position on temperature field in nitride MOCVD reactor[J].Journal of Crystal Growth,2013(Apr.1):29-34. |
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