ZnO是一种典型的直带隙宽禁带半导体材料,是下一代光电材料的代表.但由于P型化转变困难,使ZnO在光电领域的应用受到了极大限制.系统分析了ZnO的本征点缺陷结构和P型化转变方面的理论和实验研究成果,认为ZnO的n型电导应起源于本征点缺陷Zn或Vo.通过V族元素实现P型化转变的关键在于其稳定性,因此通过亚稳的点缺陷之间的相互作用实现相对较稳定的p-ZnO是V族元素掺杂实现P型化转变的研究方向.考虑到I族元素在ZnO中的固溶度较高且受主能级较浅,通过I族元素的掺杂实现高电导p-ZnO也是实现P型化转变的思路;但是Ⅰ族元素的掺杂会引起严重的自补偿,因此实现I族元素在ZnO晶格中的定位是Ⅰ族元素掺杂实现P型化转变的研究方向.
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