运用射频磁控溅射技术,改变工作压(3 ～ 10 Pa)在玻璃衬底上生长透明导电ZnO∶ Al (ZAO)样品,采用XRD、紫外-可见分光光度计、霍尔效应测量仪及SEM对薄膜微结构、厚度及其光电性能表征.结果发现:随着工作压增大,样品XRD曲线由多峰转变为(002)单峰,峰强变大半高宽减小,晶粒尺寸由10.01 nm增大到13.46 nm,薄膜结晶性能变好;紫外可见光光谱在400 ～ 760 nm波长区间平均透射率均在85％以上,且在400 nm以下均有吸收边峰出现,样品带隙宽度随工作压增加有蓝移现象,样品厚度随工作压增加从1085 nm减小到781 nm.样品电阻率随工作压从3～6 Pa增加由0.5×10-4Ω·cm增大到35×10-4Ω·cm,在6～10 Pa区间有减小趋势.
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