为了改良磁性材料的高频电磁性能,采用射频磁控溅射工艺制备了一系列FeCoB和FeCoNiB磁性薄膜.研究了Ni元素的引入对材料微结构和电磁性能的影响.结果表明,适量的Ni添加量有利于获得优良的微波电磁性能,这主要归因于B在晶粒边界的析出.制备的厚度约为200nm薄膜样品在GHz频段下同时具有高饱和磁化强度47πMs=2.212T,高铁磁共振频率f(FMR)=3.16GHz,较高的电阻率ρ=276μΩ·cm,其磁导率实部μ'在0.5～2.9GHz频率范围内>200.该薄膜可应用于GHz频段下电磁器件的设计中.
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