The electronic energy subbands and minigaps in lateral-surface superlattices (LSSLS) produced by deposition of AlAs and GaAs fractional layers on (001) vicinal GaAs substrates were calculated variationally. The results were compared with those calculated with other theories. It was found that energy minigaps induced by periodic structures on LSSL interfaces are much smaller than those induced by periodic structures inserted in the middle of LSSLS, and the approximation of infinitely high potential barriers between GaAs and AlAs interfaces is not as good in calculating the energy subbands in LSSLs as it is in the case of quantum wells.
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