随着集成电路的特征尺寸减小至深亚微米以下,互连延迟成为集成电路性能进一步提高的主要障碍.为解决互连延迟带来的危机,国际上已开发出以铜为互连材料,大马士革工艺为制造方法的铜互连工艺以取代亚微米时代的铝互连工艺.本文介绍了大马士革工艺中铜金属化以及阻挡层的研究现状.
参考文献
[1] | 阮刚;肖夏 .[J].微电子学,2003,25(01):145. |
[2] | 周健,夏冠群,刘文超,李冰寒,王嘉宽,郝幼申.Si衬底上Ta-N/Cu薄膜性能研究[J].功能材料与器件学报,2002(02):187-190. |
[3] | Y Shacham-Diamond .[J].Journal of Micromechanics and Microengineering,1991,1:66. |
[4] | Tseng W T et al.[J].Journal of the Electrochemical Society,2001,148(05):C333. |
[5] | Kim J J et al.[J].Japanese Journal of Applied Physics Part 2,2003,42(8A):L953. |
[6] | Hsu H H et al.[J].Journal of the Electrochemical Society,2001,148(01):C47. |
[7] | 徐小城.深亚微米集成电路工艺中铜金属互联技术[J].微电子技术,2001(06):1-7. |
[8] | LeGoues F K et al.[J].Interface Phil Mag,1986,52(A):833. |
[9] | Jin H F et al.[J].Applied Physics Letters,1987,50:1062. |
[10] | Venkatraman R et al.[J].Journal of Elec Mat,1990,19:1231. |
[11] | 毛卫民,张弘.大规模集成电路导电薄膜的织构效应[J].北京科技大学学报,2000(06):539-542. |
[12] | 张建民,徐可为.银和铜膜中异常晶粒生长和织构变化的实验研究[J].物理学报,2003(01):145-149. |
[13] | 陈智涛,李瑞伟.集成电路片内铜互连技术的发展[J].微电子学,2001(04):239-241. |
[14] | Yosi Shacham-Diamand et al.[J].Thin Solid Films,1995,262:93. |
[15] | Yosi Shacham-Diamand .Barrier Layers for Cu ULSI Metallization[J].Journal of Electronic Materials,2001(4):336-344. |
[16] | Ono H et al.[J].Applied Physics Letters,1994,64(12):1511. |
[17] | Wu CW.;Gau WC.;Hu JC.;Chang TC.;Chen CH.;Chu CJ.;Chen LJ. .Diffusion barrier properties of metallorganic chemical vapor deposited NbNxOyCz films for Cu metallization[J].Surface & Coatings Technology,2003(0):214-219. |
[18] | Arindom Datta;Ki Tae Nam;Soo-Hyun Kim;Ki-Bum Kim .Optimization of Al interlayer thickness for the multilayer diffusion barrier scheme in Cu metallization[J].Journal of Applied Physics,2002(2):1099-1105. |
[19] | Joseph S.;Eizenberg M.;Marcadal C.;Chen L. .TiSiN films produced by chemical vapor deposition as diffusion barriers for Cu metallization[J].Journal of Vacuum Science & Technology, B. Microelectronics and Nanometer Structures: Processing, Measurement and Phenomena,2002(4):1471-1475. |
[20] | 刘洪图,吴自勤.超大规模集成电路的一些材料物理问题(Ⅰ) --Cu互连和金属化[J].物理,2001(12):757-761. |
[21] | Wang Z et al.[J].Electrochemical and Solid-State Letters,2003,6(03):C38. |
[22] | Wang Z et al.[J].Japanese Journal of Applied Physics Part 2,2003,42(04):1843. |
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