退火处理对长波长InAsSb材料电学性能的影响

材料热处理学报, 2014, 35(12): 11-14.

退火处理对长波长InAsSb材料电学性能的影响

高玉竹 ^1, , 周冉 ^2, , 龚秀英 ^3, , 杜传兴 ^4,

1.同济大学电子与信息工程学院,上海201804

2.同济大学电子与信息工程学院,上海201804

3.同济大学电子与信息工程学院,上海201804

4.同济大学电子与信息工程学院,上海201804

基金项目: 国家自然科学基金(60777022)

关键词： InAsSb , 退火处理 , 元素分布 , 电学性质

Effect of annealing process on electrical properties of InAsSb materials with long-wavelength

Keywords： InAsSb , annealing process , element distribution , electrical property

研究长波长InAsSb半导体材料在退火处理前、后,傅里叶变换红外(FTIR)透射光谱、组份元素In、Sb和As在外延层中的分布以及电学性质的变化.用熔体外延(ME)技术,在InAs衬底上生长InAs0.05Sb0.95外延层,外延层的厚度达到100 pm.在350℃下,在氢气氛中对样品进行了11h的退火.测量结果表明,退火处理使InAsSb样品的电子迁移率从300 K下的43600 cm2/(V·s)提高到77 K下的48300 cm2/(V·s),材料的电学性能及元素分布均匀性得到了明显改善.

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材料期刊网

退火处理对长波长InAsSb材料电学性能的影响

Effect of annealing process on electrical properties of InAsSb materials with long-wavelength

参考文献