热蒸发法与溶胶-凝胶法相结合,成功制备出大量非晶SiO2纳米线.这些纳米线的直径在10～200nm范围内,长度可达几十或几百微米.借助于低温(14K)光致发光谱(PL),我们发现平均直径为150hm和15nm的非晶SiO2纳米线表现出极大的不同.前者的发光谱带可分解为峰值分别在494nm(2.51eV)和429nm(2.89eV)附近的两个蓝光发射带.而后者除了在496nm(2.5eV)有一个宽的蓝光带外,在375nm(3.32eV)、385nm(3.22eV)和395nm(3.13eV)处还表现出三个明显的紫外发光峰位.这些蓝光带的产生是由于非晶SiO2纳米线中的氧空位缺陷中心引起的,但紫外发光峰产生的原因尚需进一步研究.此外,直径为15nm的非晶SiO2纳米线的发光强度是直径为150nm的纳米线的6倍多,表现出明显的量子尺寸效应.
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