用强电流直流伸展电弧化学气相沉积金刚石薄膜装置,在CH4-Ar和CH4-H2-Ar气氛中沉积了纳米金刚石薄膜,研究了沉积气氛中H2加入量和沉积压力对金刚石薄膜显微组织和生长机制的影响.沉积气氛中H2含量对金刚石薄膜的表面形貌、晶粒尺寸和生长速度有显著影响,随着H2含量增加,金刚石晶粒尺寸增大,薄膜生长速度提高.在1%CH4-Ar气氛中沉积的纳米金刚石薄膜,晶粒尺寸细小,薄膜表面形貌光滑平整.在1%CH4-少量H2-Ar气氛中沉积的金刚石薄膜,晶粒尺寸小于100nm,薄膜表面形貌较平整.随着沉积压力提高,金刚石薄膜的生长速度增大.用激光Raman对金刚石薄膜进行了表征.
参考文献
[1] | Tang W.;Zhu C.;Yao W.;Wang Q.;Li C.;Lu F. .Nanocrystalline diamond films produced by direct current arc plasma jet process[J].Thin Solid Films: An International Journal on the Science and Technology of Thin and Thick Films,2003(1/2):63-70. |
[2] | G. Cicala;P. Bruno;F. Benedic .Nucleation, growth and characterization of nanocrystalline diamond films[J].Diamond and Related Materials,2005(3/7):421-425. |
[3] | M. Amaral;A.J.S. Femandes;M. Vila .Growth rate Improvements in the hot- filament CVD deposition of nanocrystalline diamond[J].Diamond and Related Materials,2006(11/12):1822-1827. |
[4] | Zhou D.;Qin LC.;McCauley TG.;Krauss AR.;Gruen DM. .Control of diamond film microstructure by Ar additions to CH4/H-2 microwave plasmas[J].Journal of Applied Physics,1998(4):1981-1989. |
[5] | Tien-Syh Yang;Jir-Yon Lai;Chia-Liang Cheng .Growth of faceted, ballas-like and nanocrystalline diamond films deposited in CH_4/H_2/Ar MPCVD[J].Diamond and Related Materials,2001(12):2161-2166. |
[6] | H.Kuzmany;R.Pfeiffer;N.Salk;B.Gunther .The mystery of the 1140 cm~(-1) Raman line in nanocrystalline diamond films[J].Carbon: An International Journal Sponsored by the American Carbon Society,2004(5/6):911-917. |
[7] | K. Subramanian;W.P. Kang;J.L. Davidson .The effect of growth rate control on the morphology of nanocrystalline diamond[J].Diamond and Related Materials,2005(3/7):404-410. |
上一张
下一张
上一张
下一张
计量
- 下载量()
- 访问量()
文章评分
- 您的评分:
-
10%
-
20%
-
30%
-
40%
-
50%